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IPI147N12N3G

Infineon Technologies

Product No:

IPI147N12N3G

Manufacturer:

Infineon Technologies

Package:

PG-TO262-3-1

Batch:

-

Datasheet:

-

Description:

IPI147N12 - 12V-300V N-CHANNEL P

Quantity:

Delivery:

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Payment:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 3220 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 14.7mOhm @ 56A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 61µA
Supplier Device Package PG-TO262-3-1
Drain to Source Voltage (Vdss) 120 V
Power Dissipation (Max) 107W (Tc)
Series CoolMOS™
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 56A (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk