IPN65R1K5CE

Infineon Technologies

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IPN65R1K5CE

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PG-SOT223

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Description:

SMALL SIGNAL FIELD-EFFECT TRANSI

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	225 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	10.5 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.5Ohm @ 1A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 100µA
Supplier Device Package	PG-SOT223
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	5W (Tc)
Series	CoolMOS™ CE
Package / Case	TO-261-3
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	5.2A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk