IPN70R900P7SATMA1

Infineon Technologies

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IPN70R900P7SATMA1

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Package:

PG-SOT223

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Description:

MOSFET N-CH 700V 6A SOT223

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	211 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	6.8 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	900mOhm @ 1.1A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 60µA
Supplier Device Package	PG-SOT223
Drain to Source Voltage (Vdss)	700 V
Power Dissipation (Max)	6.5W (Tc)
Series	CoolMOS™ P7
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Vgs (Max)	±16V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IPN70R900