IPP60R040S7XKSA1

Infineon Technologies

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IPP60R040S7XKSA1

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Package:

PG-TO220-3

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Description:

HIGH POWER_NEW PG-TO220-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3127 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs	83 nC @ 12 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	40mOhm @ 13A, 12V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 790µA
Supplier Device Package	PG-TO220-3
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	245W (Tc)
Series	CoolMOS™
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	13A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	12V
Package	Tube