IPP60R750E6

Infineon Technologies

Product No:

IPP60R750E6

Manufacturer:

Package:

PG-TO220-3-1

Batch:

Datasheet:

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	373 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	17.2 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	750mOhm @ 2A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 170µA
Supplier Device Package	PG-TO220-3-1
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	48W (Tc)
Series	CoolMOS E6™
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	5.7A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk