IPP65R280E6XKSA1

Infineon Technologies

Product No:

IPP65R280E6XKSA1

Manufacturer:

Package:

PG-TO220-3

Batch:

Datasheet:

Description:

MOSFET N-CH 650V 13.8A TO220-3

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	280mOhm @ 4.4A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	3.5V @ 440µA
Supplier Device Package	PG-TO220-3
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	104W (Tc)
Series	CoolMOS™
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	13.8A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IPP65R