IPP80N04S2-H4

Infineon Technologies

Product No:

IPP80N04S2-H4

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Package:

PG-TO220-3-1

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Description:

N-CHANNEL POWER MOSFET

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	148 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	4mOhm @ 80A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	PG-TO220-3-1
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	300W (Tc)
Series	CoolMOS™
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk