IPQC60R017S7AXTMA1

Infineon Technologies

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IPQC60R017S7AXTMA1

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PG-HDSOP-22

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Description:

MOSFET

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	7370 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs	196 nC @ 12 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	17mOhm @ 29A, 12V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 1.89mA
Supplier Device Package	PG-HDSOP-22
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	500W (Tc)
Series	Automotive, AEC-Q101, CoolMOS™
Package / Case	22-PowerBSOP Module
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	12V
Package	Tape & Reel (TR)