IPS60R3K4CEAKMA1

Infineon Technologies

Product No:

IPS60R3K4CEAKMA1

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PG-TO251-3

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CONSUMER

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	93 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	4.6 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	3.4Ohm @ 500mA, 10V
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	3.5V @ 40µA
Supplier Device Package	PG-TO251-3
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	-
Series	CoolMOS™ CE
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	2.6A (Tj)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IPS60R3