IPS65R1K4C6

Infineon Technologies

Product No:

IPS65R1K4C6

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Package:

PG-TO251-3

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Description:

MOSFET N-CH 650V 3.2A TO251-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	225 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	10.5 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	1.4Ohm @ 1A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 100µA
Supplier Device Package	PG-TO251-3
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	28W (Tc)
Series	CoolMOS™ C6
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	3.2A (Tc)
Vgs (Max)	±20V
Package	Bulk