IPS65R950C6

Infineon Technologies

Product No:

IPS65R950C6

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Package:

PG-TO251

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Description:

MOSFET N-CH 650V 4.5A TO251-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	328 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	15.3 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	950mOhm @ 1.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 200µA
Supplier Device Package	PG-TO251
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	37W (Tc)
Series	CoolMOS C6™
Package / Case	TO-251-3 Stub Leads, IPak
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	4.5A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk