IPT65R105G7XTMA1

Infineon Technologies

Product No:

IPT65R105G7XTMA1

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Package:

PG-HSOF-8-2

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Description:

MOSFET N-CH 650V 24A 8HSOF

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1670 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	105mOhm @ 8.9A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 440µA
Supplier Device Package	PG-HSOF-8-2
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	156W (Tc)
Series	CoolMOS™ C7
Package / Case	8-PowerSFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	24A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IPT65R105