IPTC011N08NM5ATMA1

Infineon Technologies

Product No:

IPTC011N08NM5ATMA1

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Package:

PG-HDSOP-16-2

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Description:

OPTIMOS 5 POWER MOSFET

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	17000 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs	223 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.1mOhm @ 150A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.8V @ 280µA
Supplier Device Package	PG-HDSOP-16-2
Drain to Source Voltage (Vdss)	80 V
Power Dissipation (Max)	3.8W (Ta), 375W (Tc)
Series	OptiMOS™ 5
Package / Case	16-PowerSOP Module
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	42A (Ta), 408A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)