IPW60R099C7

Infineon Technologies

Product No:

IPW60R099C7

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Package:

PG-TO247

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Description:

MOSFET N-CH 600V 22A TO247

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1819 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	99mOhm @ 9.7A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 490µA
Supplier Device Package	PG-TO247
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	110W (Tc)
Series	CoolMOS™ C7
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	22A (Tc)
Vgs (Max)	±20V
Package	Bulk