IQDH29NE2LM5CGATMA1

Infineon Technologies

Product No:

IQDH29NE2LM5CGATMA1

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Package:

PG-TTFN-9-U02

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Description:

OPTIMOS 6 POWER-TRANSISTOR

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	17000 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs	254 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	0.29mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 1.448mA
Supplier Device Package	PG-TTFN-9-U02
Drain to Source Voltage (Vdss)	25 V
Power Dissipation (Max)	2.5W (Ta), 278W (Tc)
Series	OptiMOS™ 5
Package / Case	9-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	75A (Ta), 789A (Tc)
Vgs (Max)	±16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	IQDH29