IQE006NE2LM5ATMA1

Infineon Technologies

Product No:

IQE006NE2LM5ATMA1

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Package:

PG-TSON-8-4

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Description:

MOSFET N-CH 25V 41A/298A 8TSON

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5453 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs	82.1 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	650mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 250µA
Supplier Device Package	PG-TSON-8-4
Drain to Source Voltage (Vdss)	25 V
Power Dissipation (Max)	2.1W (Ta), 89W (Tc)
Series	OptiMOS™5
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	41A (Ta), 298A (Tc)
Vgs (Max)	±16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	IQE006