IQE013N04LM6CGATMA1

Infineon Technologies

Product No:

IQE013N04LM6CGATMA1

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Package:

PG-TTFN-9-1

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Description:

40V N-CH FET SOURCE-DOWN CG 3X3

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3900 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	55 nC @ 10 V
Mounting Type	Surface Mount, Wettable Flank
Rds On (Max) @ Id, Vgs	1.35mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 51µA
Supplier Device Package	PG-TTFN-9-1
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	2.5W (Ta), 107W (Tc)
Series	OptiMOS™
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	31A (Ta), 205A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	IQE013