IQE065N10NM5CGATMA1

Infineon Technologies

Product No:

IQE065N10NM5CGATMA1

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Package:

PG-TTFN-9-1

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Description:

TRENCH >=100V PG-TTFN-9

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 10 V
Mounting Type	Surface Mount, Wettable Flank
Rds On (Max) @ Id, Vgs	6.5mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.8V @ 48µA
Supplier Device Package	PG-TTFN-9-1
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	2.5W (Ta), 100W (Tc)
Series	OptiMOS™
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	14A (Ta), 85A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	IQE065N