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IRF100P219AKMA1

Infineon Technologies

Product No:

IRF100P219AKMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO247-3

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 100V TO247AC

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 12020 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 210 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 1.7mOhm @ 100A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.8V @ 278µA
Supplier Device Package PG-TO247-3
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 3.8W (Ta), 341W (Tc)
Series StrongIRFET™
Package / Case TO-247-3
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 203A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tube