IRF40R207

Infineon Technologies

Product No:

IRF40R207

Manufacturer:

Package:

PG-TO252-3

Batch:

Datasheet:

Description:

MOSFET N-CH 40V 56A TO252

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2110 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	68 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	5.1mOhm @ 55A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.9V @ 50µA
Supplier Device Package	PG-TO252-3
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	83W (Tc)
Series	HEXFET®, StrongIRFET™
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	56A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	IRF40R207