IRF5305LPBF

Infineon Technologies

Product No:

IRF5305LPBF

Manufacturer:

Package:

TO-262

Batch:

Datasheet:

Description:

MOSFET P-CH 55V 31A TO262

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	63 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	60mOhm @ 16A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-262
Drain to Source Voltage (Vdss)	55 V
Power Dissipation (Max)	3.8W (Ta), 110W (Tc)
Series	HEXFET®
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	31A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IRF5305