IRF6100PBF

Infineon Technologies

Product No:

IRF6100PBF

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Package:

4-FlipFet™

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Description:

MOSFET P-CH 20V 5.1A 4FLIPFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	1230 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	65mOhm @ 5.1A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1.2V @ 250µA
Supplier Device Package	4-FlipFet™
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	2.2W (Ta)
Series	HEXFET®
Package / Case	4-FlipFet™
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	5.1A (Ta)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	IRF6100