IRF6643TR1PBF

Infineon Technologies

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IRF6643TR1PBF

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DIRECTFET™ MZ

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Description:

MOSFET N-CH 150V 6.2A DIRECTFET

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	55 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	34.5mOhm @ 7.6A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4.9V @ 150µA
Supplier Device Package	DIRECTFET™ MZ
Drain to Source Voltage (Vdss)	150 V
Power Dissipation (Max)	2.8W (Ta), 89W (Tc)
Series	HEXFET®
Package / Case	DirectFET™ Isometric MZ
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	6.2A (Ta), 35A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)