IRF6662TR1PBF

Infineon Technologies

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IRF6662TR1PBF

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DIRECTFET™ MZ

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Description:

MOSFET N-CH 100V 8.3A DIRECTFET

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	22mOhm @ 8.2A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4.9V @ 100µA
Supplier Device Package	DIRECTFET™ MZ
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	2.8W (Ta), 89W (Tc)
Series	HEXFET®
Package / Case	DirectFET™ Isometric MZ
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	8.3A (Ta), 47A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)