IRF6811STRPBF-INF

Infineon Technologies

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IRF6811STRPBF-INF

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DirectFET™ Isometric SQ

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Description:

DIRECTFET PLUS POWER MOSFET

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1590 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3.7mOhm @ 19A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.1V @ 35µA
Supplier Device Package	DirectFET™ Isometric SQ
Drain to Source Voltage (Vdss)	25 V
Power Dissipation (Max)	2.1W (Ta), 32W (Tc)
Series	DirectFET®
Package / Case	DirectFET™ Isometric SQ
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	19A (Ta), 74A (Tc)
Vgs (Max)	±16V
Package	Bulk