IRF7410GTRPBF

Infineon Technologies

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IRF7410GTRPBF

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8-SO

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IRF7410 - 16A, 12V, 0.007OHM, P-

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	8676 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	91 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	7mOhm @ 16A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	900mV @ 250µA
Supplier Device Package	8-SO
Drain to Source Voltage (Vdss)	12 V
Power Dissipation (Max)	2.5W (Ta)
Series	HEXFET®
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	16A (Ta)
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Bulk