IRF7521D1

Infineon Technologies

Product No:

IRF7521D1

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Micro8™

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Description:

MOSFET N-CH 20V 2.4A MICRO8

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Schottky Diode (Isolated)
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	260 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	8 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	135mOhm @ 1.7A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	700mV @ 250µA (Min)
Supplier Device Package	Micro8™
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	1.3W (Ta)
Series	FETKY™
Package / Case	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	2.4A (Ta)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.7V, 4.5V
Package	Tube