IRF7526D1TRPBF

Infineon Technologies

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IRF7526D1TRPBF

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Micro8™

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Description:

MOSFET P-CH 30V 2A MICRO8

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	200mOhm @ 1.2A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1V @ 250µA
Supplier Device Package	Micro8™
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	1.25W (Ta)
Series	FETKY™
Package / Case	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)