IRF7799L2TRPBF

Infineon Technologies

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IRF7799L2TRPBF

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DirectFET™ Isometric L8

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Description:

MOSFET N-CH 250V 375A DIRECTFET

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	6714 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	165 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	38mOhm @ 21A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	DirectFET™ Isometric L8
Drain to Source Voltage (Vdss)	250 V
Power Dissipation (Max)	4.3W (Ta), 125W (Tc)
Series	HEXFET®
Package / Case	DirectFET™ Isometric L8
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)