IRFB4233PBF

Infineon Technologies

Product No:

IRFB4233PBF

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Package:

TO-220AB

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Description:

MOSFET N-CH 230V 56A TO220AB

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Operating Temperature	-40°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	170 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	37mOhm @ 28A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	TO-220AB
Drain to Source Voltage (Vdss)	230 V
Power Dissipation (Max)	370W (Tc)
Series	HEXFET®
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	56A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube