IRFH7932TR2PBF

Infineon Technologies

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IRFH7932TR2PBF

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PQFN (5x6) Single Die

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Description:

MOSFET N-CH 30V 24A PQFN56

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4270 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	51 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3.3mOhm @ 25A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.35V @ 100µA
Supplier Device Package	PQFN (5x6) Single Die
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	3.4W (Ta)
Series	-
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	24A (Ta), 104A (Tc)
Package	Cut Tape (CT)