IRFHM4226TRPBF

Infineon Technologies

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IRFHM4226TRPBF

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MOSFET N CH 25V 28A PQFN

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs	32 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.2mOhm @ 30A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.1V @ 50µA
Drain to Source Voltage (Vdss)	25 V
Power Dissipation (Max)	2.7W (Ta), 39W (Tc)
Series	HEXFET®
Package / Case	8-TQFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	28A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)