IRFHM8326TRPBFXTMA1

Infineon Technologies

Product No:

IRFHM8326TRPBFXTMA1

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Package:

8-PQFN (3.1x3.1)

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Description:

TRENCH <= 40V

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2496 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	4.7mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 50µA
Supplier Device Package	8-PQFN (3.1x3.1)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	2.8W (Ta), 37W (Tc)
Series	HEXFET®
Package / Case	8-WDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	19A (Ta), 25A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)