IRFI4510GPBF

Infineon Technologies

Product No:

IRFI4510GPBF

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Package:

TO-220AB Full-Pak

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Description:

MOSFET N CH 100V 35A TO220

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2998 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	81 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	13.5mOhm @ 21A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 100µA
Supplier Device Package	TO-220AB Full-Pak
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	42W (Tc)
Series	HEXFET®
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube