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IRFL014NPBF

Infineon Technologies

Product No:

IRFL014NPBF

Manufacturer:

Infineon Technologies

Package:

SOT-223

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 55V 1.9A SOT223

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 190 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 160mOhm @ 1.9A, 10V
Product Status Discontinued at Digi-Key
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package SOT-223
Drain to Source Voltage (Vdss) 55 V
Power Dissipation (Max) 1W (Ta)
Series HEXFET®
Package / Case TO-261-4, TO-261AA
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 1.9A (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube