IRFR1018EPBF-INF

Infineon Technologies

Product No:

IRFR1018EPBF-INF

Manufacturer:

Package:

D-PAK (TO-252AA)

Batch:

Datasheet:

Description:

HEXFET POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2290 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	69 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	8.4mOhm @ 47A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 100µA
Supplier Device Package	D-PAK (TO-252AA)
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	110W (Tc)
Series	HEXFET®
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	56A (Tc)
Vgs (Max)	±20V
Package	Bulk