IRL100HS121

Infineon Technologies

Product No:

IRL100HS121

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Package:

6-PQFN (2x2) (DFN2020)

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Description:

MOSFET N-CH 100V 11A 6PQFN

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	440 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	5.6 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	42mOhm @ 6.7A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.3V @ 10µA
Supplier Device Package	6-PQFN (2x2) (DFN2020)
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	11.5W (Tc)
Series	-
Package / Case	6-PowerVDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	IRL100