IRLH5030TRPBF

Infineon Technologies

Product No:

IRLH5030TRPBF

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Package:

8-PQFN (5x6)

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Description:

MOSFET N-CH 100V 13A/100A 8PQFN

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5185 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	94 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	9mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 150µA
Supplier Device Package	8-PQFN (5x6)
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	3.6W (Ta), 156W (Tc)
Series	HEXFET®
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	13A (Ta), 100A (Tc)
Vgs (Max)	±16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	IRLH5030