IRLHS6342TRPBF

Infineon Technologies

Product No:

IRLHS6342TRPBF

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Package:

6-PQFN (2x2)

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Description:

MOSFET N-CH 30V 8.7A/19A 6PQFN

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1019 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	15.5mOhm @ 8.5A, 4.5V
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	1.1V @ 10µA
Supplier Device Package	6-PQFN (2x2)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	2.1W (Ta)
Series	HEXFET®
Package / Case	6-PowerVDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	8.7A (Ta), 19A (Tc)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	IRLHS6342