IRLR6225PBF

Infineon Technologies

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IRLR6225PBF

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DPAK

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Description:

MOSFET N-CH 20V 100A DPAK

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Operating Temperature	-50°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3770 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	72 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	4mOhm @ 21A, 4.5V
Product Status	Discontinued at Digi-Key
Vgs(th) (Max) @ Id	1.1V @ 50µA
Supplier Device Package	DPAK
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	63W (Tc)
Series	HEXFET®
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tube