IRLS3813TRLPBF

Infineon Technologies

Product No:

IRLS3813TRLPBF

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Package:

D²PAK (TO-263AB)

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Description:

MOSFET N-CH 30V 160A D2PAK

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	8020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	83 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.95mOhm @ 148A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.35V @ 150µA
Supplier Device Package	D²PAK (TO-263AB)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	195W (Tc)
Series	HEXFET®
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	160A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IRLS3813