IRLU3636PBF

Infineon Technologies

Product No:

IRLU3636PBF

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I-PAK

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Description:

MOSFET N-CH 60V 50A IPAK

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3779 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	49 nC @ 4.5 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	6.8mOhm @ 50A, 10V
Product Status	Last Time Buy
Vgs(th) (Max) @ Id	2.5V @ 100µA
Supplier Device Package	I-PAK
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	143W (Tc)
Series	HEXFET®
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Vgs (Max)	±16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube
Base Product Number	IRLU3636