ISC025N08NM5LFATMA1

Infineon Technologies

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ISC025N08NM5LFATMA1

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Package:

PG-TDSON-8 FL

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Description:

OPTIMOSTM5LINEARFET80V

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	6800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs	96 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.55mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.9V @ 115µA
Supplier Device Package	PG-TDSON-8 FL
Drain to Source Voltage (Vdss)	80 V
Power Dissipation (Max)	3W (Ta), 217W (Tc)
Series	OptiMOS™ 5
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	23A (Ta), 198A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)