ISC080N10NM6ATMA1

Infineon Technologies

Product No:

ISC080N10NM6ATMA1

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Package:

PG-TDSON-8 FL

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Description:

TRENCH >=100V PG-TDSON-8

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	8.05mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.3V @ 36µA
Supplier Device Package	PG-TDSON-8 FL
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	3W (Ta), 100W (Tc)
Series	OptiMOS™ 6
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	13A (Ta), 75A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
Package	Tape & Reel (TR)
Base Product Number	ISC080N