ISC800P06LMATMA1

Infineon Technologies

Product No:

ISC800P06LMATMA1

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Package:

PG-TDSON-8

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Description:

TRENCH 40<-<100V

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	1400 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	14.8 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	80mOhm @ 16A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 724µA
Supplier Device Package	PG-TDSON-8
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	83W (Tc)
Series	OptiMOS™
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	19.6A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)