ISS55EP06LMXTSA1

Infineon Technologies

Product No:

ISS55EP06LMXTSA1

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Package:

PG-SOT23-3-5

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Description:

MOSFET P-CH 60V 180MA SOT23-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	18 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	0.59 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	5.5Ohm @ 180mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 11µA
Supplier Device Package	PG-SOT23-3-5
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	400mW (Ta)
Series	OptiMOS™
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	180mA (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	ISS55EP06