ISZ0901NLSATMA1

Infineon Technologies

Product No:

ISZ0901NLSATMA1

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Package:

PG-TDSON-8-25

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Description:

25V, N-CH MOSFET, LOGIC LEVEL, P

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	670 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs	9.1 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	8.1mOhm @ 20A, 10V
Product Status	Last Time Buy
Vgs(th) (Max) @ Id	2V @ 250µA
Supplier Device Package	PG-TDSON-8-25
Drain to Source Voltage (Vdss)	25 V
Power Dissipation (Max)	26W (Tc)
Series	OptiMOS™
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	ISZ0901