NX138BKR

NXP Semiconductors

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NX138BKR

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TO-236AB

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NEXPERIA NX138BK - 60 V, SINGLE

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	20.2 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	0.49 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3.5Ohm @ 200mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	1.5V @ 250µA
Supplier Device Package	TO-236AB
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	310mW (Ta)
Series	-
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Mfr	NXP Semiconductors
Current - Continuous Drain (Id) @ 25°C	265mA (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Package	Bulk