NX7002BKMBYL

NXP Semiconductors

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NX7002BKMBYL

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Package:

DFN1006B-3

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NEXPERIA NX7002B - 60V, N-CHANNE

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	23.6 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	1 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.8Ohm @ 200mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.1V @ 250µA
Supplier Device Package	DFN1006B-3
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	350mW (Ta), 3.1W (Tc)
Series	TrenchMOS™
Package / Case	3-XFDFN
Technology	MOSFET (Metal Oxide)
Mfr	NXP Semiconductors
Current - Continuous Drain (Id) @ 25°C	350mA (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Package	Bulk