SSM3J144TU,LXHF

Toshiba Semiconductor and Storage

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SSM3J144TU,LXHF

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UFM

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SMOS P-CH VDSS:-20V VGSS:-8/+6V

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Operating Temperature	150°C
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	290 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	4.7 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	93mOhm @ 1.5A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 1mA
Supplier Device Package	UFM
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	500mW (Ta)
Series	Automotive, AEC-Q101, U-MOSVI
Package / Case	3-SMD, Flat Leads
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	3.2A (Ta)
Vgs (Max)	+6V, -8V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Package	Tape & Reel (TR)